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APT22F100J
1000V, 23A, 0.38 Max, trr 300ns
N-Channel FREDFET
Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.
S G D
S
SO
2 T-
27
"UL Recognized"
ISOTOP (R)
file # E145592
APT22F100J Single die FREDFET
G
D
S
FEATURES
* Fast switching with low EMI * Low trr for high reliability * Ultra low Crss for improved noise immunity * Low gate charge * Avalanche energy rated * RoHS compliant
TYPICAL APPLICATIONS
* ZVS phase shifted and other full bridge * Half bridge * PFC and other boost converter * Buck converter * Single and two switch forward * Flyback
Absolute Maximum Ratings
Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive
1
Ratings 23 15 140 30 2165 18
Unit
A
V mJ A
Thermal and Mechanical Characteristics
Symbol PD RJC RCS TJ,TSTG VIsolation WT Characteristic Total Power Dissipation @ TC = 25C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) Package Weight -55 2500 1.03 29.2 Torque 10 Terminals and Mounting Screws. 1.1
Microsemi Website - http://www.microsemi.com
Min
Typ
Max 545 0.23
Unit W C/W C V
050-8124 Rev C 5-2009
0.11 150
oz g in*lbf N*m
Static Characteristics
Symbol
VBR(DSS) VBR(DSS)/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS
TJ = 25C unless otherwise specified
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 250A VGS = 10V, ID = 18A VGS = VDS, ID = 2.5mA VDS = 1000V VGS = 0V TJ = 25C TJ = 125C
APT22F100J
Typ 1.15 0.32 4 -10 Max Unit V V/C V mV/C A nA
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance
3
Min 1000
Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current
2.5
0.38 5 250 1000 100
VGS = 30V
Dynamic Characteristics
Symbol
gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf
4
TJ = 25C unless otherwise specified
Test Conditions
VDS = 50V, ID = 18A VGS = 0V, VDS = 25V f = 1MHz
Parameter
Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related
Min
Typ 39 9835 130 825 335
Max
Unit S
pF
VGS = 0V, VDS = 0V to 667V
5
Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time
VGS = 0 to 10V, ID = 18A, VDS = 500V Resistive Switching VDD = 667V, ID = 18A RG = 2.2 6 , VGG = 15V
170 305 55 145 44 40 150 38
nC
ns
Source-Drain Diode Characteristics
Symbol
IS ISM VSD trr Qrr Irrm dv/dt
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt
Test Conditions
MOSFET symbol showing the integral reverse p-n junction diode (body diode)
Min
D
Typ
Max 23
Unit
G S
A 140 1.1 300 650 1.61 4.21 11.6 15.8 25 V ns C A V/ns
ISD = 18A, TJ = 25C, VGS = 0V TJ = 25C TJ = 125C ISD = 18A 3 VDD = 100V diSD/dt = 100A/s TJ = 25C TJ = 125C TJ = 25C TJ = 125C ISD 18A, di/dt 1000A/s, VDD = 667V, TJ = 125C
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25C, L = 13.36mH, RG = 25, IAS = 18A. 3 Pulse test: Pulse Width < 380s, duty cycle < 2%.
050-8124 Rev C 5-2009
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -2.85E-7/VDS^2 + 5.04E-8/VDS + 9.75E-11. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT22F100J
100
V
GS
35
= 10V T = 125C
J
30 80 ID, DRAIN CURRENT (A) ID, DRIAN CURRENT (A)
TJ = -55C
V
GS
= 6, 7, 8 & 9V
25 20 15
5V
60
TJ = 25C
40
10 5 0
4.5V
20
TJ = 125C TJ = 150C
0
0 5 10 15 20 25 30 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) Figure 1, Output Characteristics
0
5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
3.0
NORMALIZED TO VGS = 10V @ 18A
140
VDS> ID(ON) x RDS(ON) MAX.
2.5 ID, DRAIN CURRENT (A)
120 100 80
250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
2.0
1.5
TJ = -55C
60
TJ = 25C
1.0
40
TJ = 125C
0.5 0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 3, RDS(ON) vs Junction Temperature 50
TJ = -55C
20 0
0
1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics Ciss
20,000 10,000
gfs, TRANSCONDUCTANCE
40
TJ = 25C
C, CAPACITANCE (pF)
30
TJ = 125C
1000
20
Coss 100 Crss 10
10
0
0
10 15 20 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current
ID = 18A
5
25
200 400 600 800 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage
0
16 VGS, GATE-TO-SOURCE VOLTAGE (V) ISD, REVERSE DRAIN CURRENT (A) 14 12
VDS = 200V
140 120 100 80
TJ = 25C
10
VDS = 500V
8 6
VDS = 800V
60 050-8124 Rev C 5-2009 40 20 0
TJ = 150C
4 2 50 100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 0 0
0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
0
APT22F100J
200 100
IDM
200 100
IDM
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
10
13s 100s 1ms
10
Rds(on) 13s 100s 1ms 10ms TJ = 150C TC = 25C 100ms DC line
1
10ms Rds(on) TJ = 125C TC = 75C 100ms DC line
1
Scaling for Different Case & Junction Temperatures: ID = ID(T = 25C)*(TJ - TC)/125
0.1
1
10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area
0.1
C
10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area
1
0.25 D = 0.9 0.20 0.7 0.15 0.5 0.10 0.3 0.05 0.1 0 0.05 10-5 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 10-4 1.0 SINGLE PULSE
Note:
ZJC, THERMAL IMPEDANCE (C/W)
PDM
t1 t2
t1 = Pulse Duration Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193)
1.95 (.077) 2.14 (.084)
* Source
Drain
* Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal.
050-8124 Rev C 5-2009
38.0 (1.496) 38.2 (1.504)
* Source Dimensions in Millimeters and (Inches)
Gate
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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